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? semiconductor components industries, llc, 2010 october, 2010 ? rev. 10 1 publication order number: mun5111t1/d mun5111t1 series bias resistor transistors pnp silicon surface mount transistor with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the bias resistor transistor (brt) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base ? emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the sc ? 70/sot ? 323 package which is designed for low power surface mount applications. features ? simplifies circuit design ? reduces board space ? reduces component count ? the sc ? 70/sot ? 323 package can be soldered using wave or reflow. the modified gull ? winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ? available in 8 mm embossed tape and reel ? use the device number to order the 7 inch/3000 unit reel. replace ?t1? with ?t3? in the device number to order the 13 inch/10,000 unit reel. ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d 202 (note 1) 310 (note 2) 1.6 (note 1) 2.5 (note 2) mw c/w thermal resistance, junction-to-ambient r ja 618 (note 1) 403 (note 2) c/w thermal resistance, junction-to-lead r jl 280 (note 1) 332 (note 2) c/w junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr ? 4 @ minimum pad 2. fr ? 4 @ 1.0 x 1.0 inch pad pnp silicon bias resistor transistors sc ? 70/sot ? 323 case 419 style 3 3 2 1 pin 3 collector (output) pin 2 emitter (ground) pin 1 base (input) r 1 r 2 marking diagram ordering information see specific ordering and shipping information in the package dimensions section on page 2 of this data sheet. http://onsemi.com 6x = device code m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 6x m
mun5111t1 series http://onsemi.com 2 ordering information and resistor values device package marking r1 (k) r2 (k) shipping ? mun5111t1g sc ? 70/sot ? 323 (pb ? free) 6a 10 10 3000/tape & reel mun5112t1g sc ? 70/sot ? 323 (pb ? free) 6b 22 22 3000/tape & reel mun5113t1g sc ? 70/sot ? 323 (pb ? free) 6c 47 47 3000/tape & reel mun5113t3g sc ? 70/sot ? 323 (pb ? free) 6c 47 47 10,000/tape & reel mun5113t1g sc ? 70/sot ? 323 (pb ? free) 6c 47 47 3000/tape & reel mun5114t1g sc ? 70/sot ? 323 (pb ? free) 6d 10 47 3000/tape & reel mun5115t1g (note 3) sc ? 70/sot ? 323 (pb ? free) 6e 10 3000/tape & reel mun5116t1g (note 3) sc ? 70/sot ? 323 (pb ? free) 6f 4.7 3000/tape & reel mun5130t1g (note 3) sc ? 70/sot ? 323 (pb ? free) 6g 1.0 1.0 3000/tape & reel mun5131t1g (note 3) sc ? 70/sot ? 323 (pb ? free) 6h 2.2 2.2 3000/tape & reel mun5132t1g (note 3) sc ? 70/sot ? 323 (pb ? free) 6j 4.7 4.7 3000/tape & reel mun5133t1g (note 3) sc ? 70/sot ? 323 (pb ? free) 6k 4.7 47 3000/tape & reel mun5134t1g (note 3) sc ? 70/sot ? 323 (pb ? free) 6l 22 47 3000/tape & reel mun5135t1g (note 3) sc ? 70/sot ? 323 (pb ? free) 6m 2.2 47 3000/tape & reel mun5136t1g sc ? 70/sot ? 323 (pb ? free) 6n 100 100 3000/tape & reel mun5137t1g sc ? 70/sot ? 323 (pb ? free) 6p 47 22 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. 3. new devices. updated curves to follow in subsequent data sheets.
mun5111t1 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector ? emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter ? base cutoff current mun5111t1 (v eb = 6.0 v, i c = 0) mun5112t1 mun5113t1 mun5114t1 mun5115t1 mun5116t1 mun5130t1 mun5131t1 mun5132t1 mun5133t1 mun5134t1 mun5135t1 mun5136t1 mun5137t1 i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 madc collector ? base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector ? emitter breakdown voltage (note 4) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (note 4) dc current gain mun5111t1 (v ce = 10 v, i c = 5.0 ma) mun5112t1 mun5113t1 mun5114t1 mun5115t1 mun5116t1 mun5130t1 mun5131t1 mun5132t1 mun5133t1 mun5134t1 mun5135t1 mun5136t1 mun5137t1 h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 ? ? ? ? ? ? ? ? ? ? ? ? ? ? collector ? emitter saturation voltage (i c = 10 ma, i e = 0.3 ma) (i c = 10 ma, i b = 5 ma) mun5130t1/mun5131t1 (i c = 10 ma, i b = 1 ma) mun5115t1/mun5116t1/ mun5132t1/mun5133t1/mun5134t1 v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) mun5111t1 mun5112t1 mun5114t1 mun5115t1 mun5116t1 mun5130t1 mun5131t1 mun5132t1 mun5133t1 mun5134t1 mun5135t1 (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) mun5113t1 (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k ) mun5136t1 (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ) mun5137t1 v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc 4. pulse test: pulse width < 300 s, duty cycle < 2.0%
mun5111t1 series http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) (v cc = 5.0 v, v b = 0.050 v, r l = 1.0 k ) mun5130t1 (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) mun5115t1 mun5116t1 mun5131t1 mun5132t1 v oh 4.9 ? ? vdc input resistor mun5111t1 mun5112t1 mun5113t1 mun5114t1 mun5115t1 mun5116t1 mun5130t1 mun5131t1 mun5132t1 mun5133t1 mun5134t1 mun5135t1 mun5136t1 mun5137t1 r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k resistor ratio mun5111t1/mun5112t1/mun5113t1/mun5136t1 mun5114t1 mun5115t1/mun5116t1 mun5130t1/mun5131t1/mun5132t1 mun5133t1 mun5134t1 mun5135t1 mun5137t1 r 1 /r 2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.7 1.0 0.21 ? 1.0 0.1 0.47 0.047 2.1 1.2 0.25 ? 1.2 0.185 0.56 0.056 2.6 figure 1. derating curve 250 200 150 100 50 0 -50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r ja = 833 c/w
mun5111t1 series http://onsemi.com 5 typical electrical characteristics ? mun5111t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input voltage (volts) t a =-25 c 25 c 1 2 3 4 5 6 7 8 9 10 figure 3. dc current gain figure 4. output capacitance figure 5. output current versus input voltage figure 6. input voltage versus output current 0.01 20 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 0.1 1 0 40 50 1000 1 10 100 i c , collector current (ma) t a =75 c -25 c 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a =-25 c 25 c 75 c 75 c i c /i b = 10 50 010203040 4 3 1 2 v r , reverse bias voltage (volts) c ob , capacitance (pf) 0 t a =-25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
mun5111t1 series http://onsemi.com 6 typical electrical characteristics ? mun5112t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c figure 8. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 figure 9. output capacitance i c , collector current (ma) 0 10 20 30 v o = 0.2 v t a =-25 c 75 c 100 10 1 0.1 40 50 figure 10. output current versus input voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input voltage (volts) 5 6 7 8 9 10 figure 11. input voltage versus output current 0.01 v ce(sat) , maximum collector voltage (volts) 0.1 1 10 40 i c , collector current (ma) 0 20 50 75 c 25 c t a =-25 c 50 010203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 25 c i c /i b = 10 25 c -25 c v ce = 10 v t a =75 c f = 1 mhz l e = 0 v t a = 25 c 75 c 25 c t a =-25 c v o = 5 v
mun5111t1 series http://onsemi.com 7 typical electrical characteristics ? mun5113t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c i c , collector current (ma) 1 0.1 0.01 010203040 75 c 25 c v ce(sat) , maximum collector voltage (volts) figure 13. dc current gain 1000 100 10 1 10 100 i c , collector current (ma) -25 c figure 14. output capacitance figure 15. output current versus input voltage 100 10 1 0.1 0.01 0.001 010 25 c v in , input voltage (volts) -25 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 123456 789 figure 16. input voltage versus output current 100 10 1 0.1 0 10 20 30 40 i c , collector current (ma) t a =-25 c 25 c 75 c 50 i c /i b = 10 t a =-25 c 25 c t a =75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v t a =75 c v o = 0.2 v
mun5111t1 series http://onsemi.com 8 typical electrical characteristics ? mun5114t1 10 1 0.1 010 20 30 4050 100 10 1 0 246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 18. dc current gain 1 10 100 i c , collector current (ma) figure 19. output capacitance figure 20. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c load +12 v figure 22. inexpensive, unregulated current source typical application for pnp brts 25 c i c /i b = 10 t a =-25 c t a =75 c 25 c -25 c v o = 5 v v o = 0.2 v 25 c t a =-25 c 75 c 75 c
mun5111t1 series http://onsemi.com 9 typical electrical characteristics ? mun5132t1 ? 25 c 75 c 25 c ? 25 c figure 23. maximum collector voltage versus collector current figure 24. dc current gain figure 25. output capacitance figure 26. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 27. input voltage versus output current i c , output current (ma) i c , collector current (ma) 1 0.1 35 30 25 20 15 10 5 0 i c , collector current (ma) 120 20 0 100 10 1 0.01 1000 v ce(sat) , maximum collector voltage (volts) h fe , dc current gain 10 4 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 1 2 5 7 100 6 5 4 3 2 1 0 0.01 1 10 i c , collector current (ma) 10 9 8 7 10 30 25 20 15 10 5 0 0.1 1 45 40 35 50 v in , input voltage (volts) 75 c 25 c 75 c 25 c 75 c 25 c 40 60 80 100 3 6 8 9 0.1 ? 25 c ? 25 c
mun5111t1 series http://onsemi.com 10 typical electrical characteristics ? mun5133t1 75 c 25 c ? 25 c figure 28. v ce(sat) versus i c figure 29. dc current gain figure 30. output capacitance figure 31. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 32. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 5 1 3 7 i c /i b = 10 v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
mun5111t1 series http://onsemi.com 11 typical electrical characteristics ? mun5136t1 75 c 25 c ? 25 c figure 33. maximum collector voltage versus collector current figure 34. dc current gain figure 35. output capacitance figure 36. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 37. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 7 6 5 4 3 2 1 0 i c , collector current (ma) 100 10 1 100 10 1 0.01 1000 v ce(sat) , maximum collector voltage (volts) h fe , dc current gain (normalized) 1.2 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.1 1 10 i c , collector current (ma) 10 9 8 7 100 12 10 8 6 4 2 0 1 10 18 16 14 20 v in , input voltage (volts) i c /i b = 10 75 c 25 c t a = ? 25 c v ce = 10 v 75 c 25 c t a = ? 25 c v o = 5 v v o = 0.2 v 75 c 25 c t a = ? 25 c f = 1 mhz i e = 0 v t a = 25 c
mun5111t1 series http://onsemi.com 12 typical electrical characteristics ? mun5137t1 figure 38. maximum collector voltage versus collector current figure 39. dc current gain figure 40. output capacitance figure 41. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 42. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 35 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 0.01 1000 v ce(sat) , maximum collector voltage (volts) h fe , dc current gain (normalized) 1.4 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 11 9 8 7 100 15 10 5 0 1 10 20 25 v in , input voltage (volts) 50 45 40 0.1 0.01 10 1.2 f = 1 mhz i e = 0 v t a = 25 c 75 c 25 c t a = ? 25 c v o = 5 v 75 c 25 c t a = ? 25 c v o = 0.2 v 75 c 25 c t a = ? 25 c i c /i b = 10 v ce = 10 v 75 c 25 c t a = ? 25 c
mun5111t1 series http://onsemi.com 13 package dimensions sc ? 70/sot ? 323 case 419 ? 04 issue n style 3: pin 1. base 2. emitter 3. collector 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. sc illc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems in tended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scill c and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding th e design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resa le in any manner. mun5111t1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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